Nano-Roughness Enhanced Reliability of MOS Tunneling Diodes

F. Yuan; C.-H. Lin; C.-R. Shie; K.-F. Chen; M. H. Lee; C. W. Liu

doi:https://doi.org/10.7567/SSDM.2002.P2-5

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[P2-5] Nano-Roughness Enhanced Reliability of MOS Tunneling Diodes

F. Yuan、C.-H. Lin、C.-R. Shie、K.-F. Chen、M. H. Lee、C. W. Liu (1.Graduate Institute of Electronics Engineering and Department of Electrical Engineering, National Taiwan University)

https://doi.org/10.7567/SSDM.2002.P2-5

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