[P3-1] Annealing Effects on Interface States and Fixed Charges of TiN/Al2O3/Si MOS structure deposited by Atomic Layer Deposition

In Sang Jeon、Jaehoo Park、Cheol Seong Hwang、Hyeong Joon Kim、Jong-Ho Lee、Nae-In Lee、Ho-Kyu Kang (1.School of Materials Science & Engineering, Seoul National University、2.Advanced Process & Development TEAM, System LSI Division & Technology & Development TEAM, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2002.P3-1