The Japan Society of Applied Physics

[P3-1] Annealing Effects on Interface States and Fixed Charges of TiN/Al2O3/Si MOS structure deposited by Atomic Layer Deposition

In Sang Jeon, Jaehoo Park, Cheol Seong Hwang, Hyeong Joon Kim, Jong-Ho Lee, Nae-In Lee, Ho-Kyu Kang (1.School of Materials Science & Engineering, Seoul National University, 2.Advanced Process & Development TEAM, System LSI Division & Technology & Development TEAM, Samsung Electronics Co., Ltd.)