[P3-20] Rapid Thermal Formation of Device-quality SiO2 Film by Using Highly Concentrated Ozone Gas at below 600℃

Tetsuya Nishiguchi、Hidehiko Nonaka、Shingo Ichimura、Yoshiki Morikawa、Mitsuru Kekura、Masaharu Miyamoto (1.National Institute of Advanced Industrial Science and Technology, Ultra-fine Profiling Technology Laboratory、2.Meidensha Corporation, Material & Device Department, Central Research Laboratory)

https://doi.org/10.7567/SSDM.2002.P3-20