[P3-20] Rapid Thermal Formation of Device-quality SiO2 Film by Using Highly Concentrated Ozone Gas at below 600℃

Tetsuya Nishiguchi, Hidehiko Nonaka, Shingo Ichimura, Yoshiki Morikawa, Mitsuru Kekura, Masaharu Miyamoto (1.National Institute of Advanced Industrial Science and Technology, Ultra-fine Profiling Technology Laboratory, 2.Meidensha Corporation, Material & Device Department, Central Research Laboratory)

https://doi.org/10.7567/SSDM.2002.P3-20