[P3-21] Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon

Fan Xinyu, Hideo Isshiki, Riichiro Saito, Tadamasa Kimura, Satoshi Yamamoto, Cui Rongqiang (1.Department of Electronic Engineering, The University of Electro-Communications, 2.Electron Device Laboratory, Fujikura Ltd., 3.Department of Applied Physics, Shanghai Jiao Tong University)

https://doi.org/10.7567/SSDM.2002.P3-21