Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon

Fan Xinyu; Hideo Isshiki; Riichiro Saito; Tadamasa Kimura; Satoshi Yamamoto; Cui Rongqiang

doi:https://doi.org/10.7567/SSDM.2002.P3-21

[P3-21] Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon

Fan Xinyu、Hideo Isshiki、Riichiro Saito、Tadamasa Kimura、Satoshi Yamamoto、Cui Rongqiang (1.Department of Electronic Engineering, The University of Electro-Communications、2.Electron Device Laboratory, Fujikura Ltd.、3.Department of Applied Physics, Shanghai Jiao Tong University)

https://doi.org/10.7567/SSDM.2002.P3-21

2002 International Conference on Solid State Devices and Materials

[P3-21] Room Temperature Formation of Thick SiO2 Layers by Anodic Oxidation of Porous Silicon