[P3-4] Novel Nanoprocess for Vertical Double-Gate MOSFET Fabrication by Ion-Bombardment-Retarded Etching
Meishoku Masahara, Takashi Matsukawa, Ken-ichi Ishii, Yongxun Liu, Masayoshi Nagao, Hisao Tanoue, Takashi Tanii, Iwao Ohdomari, Seigo Kanemaru, Eiichi Suzuki
(1.Nanoelectronics Research Institute, National Institute of AIST, 2.School of Science and Engineering, Waseda University)
https://doi.org/10.7567/SSDM.2002.P3-4
