Integrity of Gate Oxide grown on Si implanted Si-substrate

Heung-Jae Cho; Kwan-Yong Lim; Jeong-Youb Lee; Dae-Gyu Park; In-Seok Yeo; Jae-Sung Roh

doi:https://doi.org/10.7567/SSDM.2002.P3-7

2002 International Conference on Solid State Devices and Materials

2002年9月17日〜 2002年9月19日
Nagoya Congress Center, Nagoya, Japan

[P3-7] Integrity of Gate Oxide grown on Si implanted Si-substrate

Heung-Jae Cho、Kwan-Yong Lim、Jeong-Youb Lee、Dae-Gyu Park、In-Seok Yeo、Jae-Sung Roh (1.Advanced Process Team, Memory R&D Division, Hynix Semiconductor Inc.)

https://doi.org/10.7567/SSDM.2002.P3-7

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