Novel Nickel Silicide Formation Technique for Sub-50nm MOS Device Application

JeoungChill Shim; Chang-woo Lee; Takeshi Sakaguchi; Hyuckjae Oh; Hoon Choi; Hiroyuki Kurino; Mitsumasa Koyanagi

doi:https://doi.org/10.7567/SSDM.2002.P3-8

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[P3-8] Novel Nickel Silicide Formation Technique for Sub-50nm MOS Device Application

JeoungChill Shim, Chang-woo Lee, Takeshi Sakaguchi, Hyuckjae Oh, Hoon Choi, Hiroyuki Kurino, Mitsumasa Koyanagi (1.Dept. of Machine Intelligence and Systems Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2002.P3-8

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