[P5-1] Reduced Gate Leakage in AlGaAs/InGaAs pHEMTs by a Si3N4 Sidewall Planarized Process

Cheng-Kuo Lin、Wen-Kai Wang、Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)

https://doi.org/10.7567/SSDM.2002.P5-1