Reduced Gate Leakage in AlGaAs/InGaAs pHEMTs by a Si3N4 Sidewall Planarized Process

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

Cheng-Kuo Lin, Wen-Kai Wang, Yi-Jen Chan (1.Department of Electrical Engineering, National Central University)