AlGaN/GaN heterostructure MIS-HEMTs with Si3N4 gate insulator

M. Ochiai; M. Akita; Y. Ohno; S. Kishimoto; K. Maezawa; T. Mizutani

doi:https://doi.org/10.7567/SSDM.2002.P5-10

2002 International Conference on Solid State Devices and Materials

Sep 17, 2002 - Sep 19, 2002
Nagoya Congress Center, Nagoya, Japan

[P5-10] AlGaN/GaN heterostructure MIS-HEMTs with Si3N4 gate insulator

M. Ochiai, M. Akita, Y. Ohno, S. Kishimoto, K. Maezawa, T. Mizutani (1.Department of Quantum Engineering, Graduate School of Engineering, Nagoya University)

https://doi.org/10.7567/SSDM.2002.P5-10

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