The Japan Society of Applied Physics

[P5-3] Enhancement and Accumulation Mode Operation of GaAs MISFETs and InAlAs/InGaAs MISHEMTs with nm-Thin Gate Oxide Layers

M. Nasuno、K. Nakamura、Y. Kita、Y. Ohta、K. Iiyama、S. Takamiya (1.Graduate School of Natural Science and Technology, Kanazawa University)

https://doi.org/10.7567/SSDM.2002.P5-3