[A-1-2] Influences of Gate-Poly Impurity Concentration on Inversion-Layer Mobility in MOSFETs with Ultrathin Gate Oxide Film

Junji Koga, Takamitsu Ishihara, Shin-ichi Takagi (1.Advanced LSI Technology Laboratory, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.A-1-2