[A-1-5] Direct evaluation of an interfacial layer in high-k gate dielectrics by 1/f noise measurements

Tsuyoshi Ishikawa、Shinpei Tsujikawa、Shin-ichi Saito、Digh Hisamoto、Shin’ichiro Kimura (1.Central Research Laboratory, Hitachi, Ltd.)

https://doi.org/10.7567/SSDM.2003.A-1-5