High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology

Fuminobu Imaizumi; Tomohiko Hayashi; Katsuji Ishii; Akinobu Teramoto; Masaki Hirayama; Shigetoshi Sugawa; Tadahiro Ohmi

doi:https://doi.org/10.7567/SSDM.2003.A-10-1

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-10-1] High Performance Poly-Si Device with Thin Gate Oxide Film Grown by Plasma Oxidation Technology

Fuminobu Imaizumi、Tomohiko Hayashi、Katsuji Ishii、Akinobu Teramoto、Masaki Hirayama、Shigetoshi Sugawa、Tadahiro Ohmi (1.The New Industry Creation Hatchery Center, Tohoku University、2.Graduate school of Engineering, Tohoku University)

https://doi.org/10.7567/SSDM.2003.A-10-1

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