Enhancement of VTH Degradation under NBT Stress due to Hole Capturing

Yuichiro Mitani; Makoto Nagamine; Hideki Satake; A. Toriumi

doi:https://doi.org/10.7567/SSDM.2003.A-2-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-2-1] Enhancement of VTH Degradation under NBT Stress due to Hole Capturing

Yuichiro Mitani, Makoto Nagamine, Hideki Satake, A. Toriumi (1.Advanced LSI Technology Laboratory, Corporate R&D Center, Toshiba Corporation, 2.Department of Materials Science, The University of Tokyo)

https://doi.org/10.7567/SSDM.2003.A-2-1

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