[A-2-6] Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

S.H. Park, H.D. Lee, J.S. Kim, S.H Baek, H. Chang, J.H. Lee, K.C. Kim, B.S. Song, H.K. Bae, M.O. Kim, H.S. Lee, Y.S. Kang, D.B. Kim (1.System IC R&D Division, Hynix Semiconductor Inc., 2.Dept. of Electronics Engineering, Chungnam National University)

https://doi.org/10.7567/SSDM.2003.A-2-6