[A-2-6] Gate Engineering to prevent NMOS Dopant Channeling for Nano-Scale CMOSFET Technology

S.H. Park、H.D. Lee、J.S. Kim、S.H Baek、H. Chang、J.H. Lee、K.C. Kim、B.S. Song、H.K. Bae、M.O. Kim、H.S. Lee、Y.S. Kang、D.B. Kim (1.System IC R&D Division, Hynix Semiconductor Inc.、2.Dept. of Electronics Engineering, Chungnam National University)

https://doi.org/10.7567/SSDM.2003.A-2-6