High Performance Strained Si/SiGe N-channel MOSFETs: Impact of Alloy Composition and Layer Architecture

SH Olsen; LS Driscoll; KSK Kwa; S Chattopadhay; AG O'Neill

doi:https://doi.org/10.7567/SSDM.2003.A-9-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[A-9-4] High Performance Strained Si/SiGe N-channel MOSFETs: Impact of Alloy Composition and Layer Architecture

SH Olsen, LS Driscoll, KSK Kwa, S Chattopadhay, AG O'Neill (1.School of Electrical, Electronic and Computer Engineering, University of Newcastle, U.K.)

https://doi.org/10.7567/SSDM.2003.A-9-4

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