The Japan Society of Applied Physics

[B-1-3] A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Gen Hirooka、Minoru Noda、Masanori Okuyama (1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2003.B-1-3