A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Gen Hirooka; Minoru Noda; Masanori Okuyama

doi:https://doi.org/10.7567/SSDM.2003.B-1-3

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-1-3] A proposal of new ferroelectric gate field effect transistor memory based on ferroelectric-insulator interface conduction

Gen Hirooka、Minoru Noda、Masanori Okuyama (1.Division of Advanced Electronics and Optical Science, Department of Systems Innovation, Graduate School of Engineering Science, Osaka University)

https://doi.org/10.7567/SSDM.2003.B-1-3

▲