[B-1-4] Long-Term Stabilization of Sense Signals in a Non-Destructive Readout FeRAM by Intentional Modification of the Polarization Hysteresis Curve for Low Voltage Applications

T. Yamada, Y. Kato, S. Koyama, Y. Shimada (1.Semiconductor Company, Matsushita Electric Industrial Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.B-1-4