[B-10-6L] Double Gate MOSFET by ESS (Empty Space in Silicon) Architecture

Tsutomu Sato、Hideaki Nii、Masayuki Hatano、Yoshimitsu Kato、Kazutaka Ishigo、Keiichi Takenaka、Hisataka Hayashi、Tomoyuki Hirano、Kazuhiko Ida、Takeshi Watanabe、Nobutoshi Aoki、Kazumi Ino、Shigeru Kawanaka、Ichiro Mizushima、Yoshitaka Tsunashima (1.Process & Manufacturing Engineering Center, SoC Research & Development Center、2.Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.B-10-6L