[B-10-6L] Double Gate MOSFET by ESS (Empty Space in Silicon) Architecture

Tsutomu Sato, Hideaki Nii, Masayuki Hatano, Yoshimitsu Kato, Kazutaka Ishigo, Keiichi Takenaka, Hisataka Hayashi, Tomoyuki Hirano, Kazuhiko Ida, Takeshi Watanabe, Nobutoshi Aoki, Kazumi Ino, Shigeru Kawanaka, Ichiro Mizushima, Yoshitaka Tsunashima (1.Process & Manufacturing Engineering Center, SoC Research & Development Center, 2.Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.B-10-6L