Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable FRAM Device

H. H. Kim; J. H. Park; Y. J. Song; N. W. Jang; H. J. Joo; S. K. Kang; S. H. Joo; S. Y. Lee; Kinam Kim

doi:https://doi.org/10.7567/SSDM.2003.B-2-1

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-2-1] Novel Capacitor Structure Using Sidewall Spacer for Highly Reliable FRAM Device

H. H. Kim, J. H. Park, Y. J. Song, N. W. Jang, H. J. Joo, S. K. Kang, S. H. Joo, S. Y. Lee, Kinam Kim (1.Advanced Technology Development Team, Memory Division, Device Solution Network, Samsung Electronics Co. Ltd.)

https://doi.org/10.7567/SSDM.2003.B-2-1

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