[B-4-1] A 0.18-μm Embedded MNOS-Type Non-volatile Memory for High-Frequency and Low-Voltage Operation

N. Matsuzaki, T. Ishimaru, Y. Okuyama, T. Mine, H. Kume, T. Hashimoto, Y. Kanamaru, T. Sakai, Y. Kawashima, F. Ito, M. Mizuno, K. Okuyama, Y. Shinagawa, K. Kuroda, S. Meguro, T. Toya (1.Hitachi Central Research Laboratory, Hitachi, Ltd., 2.Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2003.B-4-1