[B-4-1] A 0.18-μm Embedded MNOS-Type Non-volatile Memory for High-Frequency and Low-Voltage Operation

N. Matsuzaki、T. Ishimaru、Y. Okuyama、T. Mine、H. Kume、T. Hashimoto、Y. Kanamaru、T. Sakai、Y. Kawashima、F. Ito、M. Mizuno、K. Okuyama、Y. Shinagawa、K. Kuroda、S. Meguro、T. Toya (1.Hitachi Central Research Laboratory, Hitachi, Ltd.、2.Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2003.B-4-1