[B-4-2] 70 nm SONOS Nonvolatile Memory Devices using FN Programming and Hot Hole Erase Method

Soo Doo Chae、Chang Ju Lee、Ju Hyung Kim、Suk Kang Sung、Jae Seong Sim、Moon Kyung Kim、Se Wook Yoon、Youn Seok Jeong、Won Il Ryu、Tae Hun Kim、Byung-Gook Park、Jo Won Lee、Chung Woo Kim (1.Material and Device Lab., Samsung Advanced Institute of Technology、2.Inter-University Semiconductor Research Center (ISRC) and School of Electrical Engineering, Seoul National University, College of Engineering)

https://doi.org/10.7567/SSDM.2003.B-4-2