A New Investigation on Erase VT Variation of NOR Flash fabricated with 90 nm Technology

T.Y. Kim; W.H. Lee; J.I. Han; S.E. Lee; H.G. Lee; S.Y. Kim; J.H. Park; S.W. Park; J.H. Choi; M.K. Cho; Y.H. Song; Kinam Kim

doi:https://doi.org/10.7567/SSDM.2003.B-6-2

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[B-6-2] A New Investigation on Erase VT Variation of NOR Flash fabricated with 90 nm Technology

T.Y. Kim, W.H. Lee, J.I. Han, S.E. Lee, H.G. Lee, S.Y. Kim, J.H. Park, S.W. Park, J.H. Choi, M.K. Cho, Y.H. Song, Kinam Kim (1.Advanced Technology Development Team, Semiconductor R&D Center, Memory Business, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.B-6-2

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