[B-7-2] New Dual Metal Gate by Using WSix for nMOS and Pt-alloyed WSix for pMOS

Kouji Matsuo、Osamu Arisumi、Kyoichi Suguro (1.Process and Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.B-7-2