[B-7-3] Highly Selective Etching of Ta/TaNx Metal Electrode to Si3N4 Gate Dielectric Employing SiCl4-NF3 Gas Mixture Plasma

Hiroyuki Shimada、Koichi Maruyama (1.New Device Development Group, SEIKO EPSON Corporation)

https://doi.org/10.7567/SSDM.2003.B-7-3