[B-8-1] Ni-salicided Poly-Si/poly-SiGe Layered Gate Technology for 65nm-node CMOSFETs
Akiyoshi Muto、Hiroshi Ohji、Takeshi Maeda、Kazuyoshi Torii
(1.Semiconductor Leading Edge Technologies, Inc.(SELETE), Research Dept. 1)
https://doi.org/10.7567/SSDM.2003.B-8-1
