[C-1-4] Ultra-thin (EOT ＜ 1.0nm) Amorphous HfSiON Gate Insulator with High Hf Concentration for High-performance Logic Applications

Masahiro Koike, Tsunehiro Ino, Masato Koyama, Yoshiki Kamata, Yuuichi Kamimuta, Masamichi Suzuki, Akira Takashima, Yuichiro Mitani, Akira Nishiyama, Yoshitaka Tsunashima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation, 2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.C-1-4