[C-1-4] Ultra-thin (EOT ＜ 1.0nm) Amorphous HfSiON Gate Insulator with High Hf Concentration for High-performance Logic Applications

Masahiro Koike、Tsunehiro Ino、Masato Koyama、Yoshiki Kamata、Yuuichi Kamimuta、Masamichi Suzuki、Akira Takashima、Yuichiro Mitani、Akira Nishiyama、Yoshitaka Tsunashima (1.Advanced LSI Technology Laboratory, Corporate Research & Development Center, Toshiba Corporation、2.Process & Manufacturing Engineering Center, Semiconductor Company, Toshiba Corporation)

https://doi.org/10.7567/SSDM.2003.C-1-4