[C-2-2] Controlled Nitrogen Incorporation into HfAlOx by Layer-by-Layer Deposition and Annealing (LL-D&A) Process and Its Impact on Electrical Properties of MOSCAPs and nMOSFETs

K. Tominaga、K. Iwamoto、H. Hisamatsu、T. Yasuda、H. Ota、N. Yasuda、T. Nabatame、A. Toriumi (1.MIRAI-ASET, AIST、2.MIRAI-ASRC, AIST、3.Department of Materials Science, the University of Tokyo)

https://doi.org/10.7567/SSDM.2003.C-2-2