[C-2-2] Controlled Nitrogen Incorporation into HfAlOx by Layer-by-Layer Deposition and Annealing (LL-D&A) Process and Its Impact on Electrical Properties of MOSCAPs and nMOSFETs

K. Tominaga, K. Iwamoto, H. Hisamatsu, T. Yasuda, H. Ota, N. Yasuda, T. Nabatame, A. Toriumi (1.MIRAI-ASET, AIST, 2.MIRAI-ASRC, AIST, 3.Department of Materials Science, the University of Tokyo)

https://doi.org/10.7567/SSDM.2003.C-2-2