Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient

Hokyung Park; Hyundoek Yang; Hyunjun Sim; Hyunsang Hwang

doi:https://doi.org/10.7567/SSDM.2003.C-2-4

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-2-4] Reliability characteristics of an HfO2/SiO2 stack gate dielectric annealed in a deuterium ambient

Hokyung Park, Hyundoek Yang, Hyunjun Sim, Hyunsang Hwang (1.Department of Materials Science and Engineering, Kwangju Institute of Science and Technology)

https://doi.org/10.7567/SSDM.2003.C-2-4

▲