Enhancement of dielectric constant due to expansion of lattice spacing in CeO2 directly grown on Si (111)

Daisuke Matsushita; Yukie Nishikawa; Nobutaka Satou; Masahiko Yoshiki; Tatsuo Schimizu; Takeshi Yamaguchi; Hideki Satake; Noburu Fukushima

doi:https://doi.org/10.7567/SSDM.2003.C-2-5

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-2-5] Enhancement of dielectric constant due to expansion of lattice spacing in CeO2 directly grown on Si (111)

Daisuke Matsushita、Yukie Nishikawa、Nobutaka Satou、Masahiko Yoshiki、Tatsuo Schimizu、Takeshi Yamaguchi、Hideki Satake、Noburu Fukushima (1.Advanced LSI Technology Laboratory, Toshiba Corporation and、2.Toshiba Nanoanalysis Corporation)

https://doi.org/10.7567/SSDM.2003.C-2-5

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