Enhancement of dielectric constant due to expansion of lattice spacing in CeO2 directly grown on Si (111)

Daisuke Matsushita; Yukie Nishikawa; Nobutaka Satou; Masahiko Yoshiki; Tatsuo Schimizu; Takeshi Yamaguchi; Hideki Satake; Noburu Fukushima

doi:https://doi.org/10.7567/SSDM.2003.C-2-5

[C-2-5] Enhancement of dielectric constant due to expansion of lattice spacing in CeO2 directly grown on Si (111)

Daisuke Matsushita, Yukie Nishikawa, Nobutaka Satou, Masahiko Yoshiki, Tatsuo Schimizu, Takeshi Yamaguchi, Hideki Satake, Noburu Fukushima (1.Advanced LSI Technology Laboratory, Toshiba Corporation and, 2.Toshiba Nanoanalysis Corporation)

https://doi.org/10.7567/SSDM.2003.C-2-5

2003 International Conference on Solid State Devices and Materials

[C-2-5] Enhancement of dielectric constant due to expansion of lattice spacing in CeO2 directly grown on Si (111)