W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Tomohiro Yamashita; Yukio Nishida; Kiyoshi Hayashi; Takahisa Eimori; Masahide Inuishi; Yuzuru Ohji

doi:https://doi.org/10.7567/SSDM.2003.C-3-2

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-3-2] W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Tomohiro Yamashita, Yukio Nishida, Kiyoshi Hayashi, Takahisa Eimori, Masahide Inuishi, Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2003.C-3-2

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