The Japan Society of Applied Physics

[C-3-2] W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Tomohiro Yamashita、Yukio Nishida、Kiyoshi Hayashi、Takahisa Eimori、Masahide Inuishi、Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2003.C-3-2