W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Tomohiro Yamashita; Yukio Nishida; Kiyoshi Hayashi; Takahisa Eimori; Masahide Inuishi; Yuzuru Ohji

doi:https://doi.org/10.7567/SSDM.2003.C-3-2

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-3-2] W-Polymetal Gate with Low W/Poly-Si Interface Resistance for High-Speed/High-Density Embedded Memory

Tomohiro Yamashita、Yukio Nishida、Kiyoshi Hayashi、Takahisa Eimori、Masahide Inuishi、Yuzuru Ohji (1.Advanced Device Development Dept., Renesas Technology Corp.)

https://doi.org/10.7567/SSDM.2003.C-3-2

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