Silicon Selective Epitaxial Growth for Self-Aligned Cell Contact Featuring High Performance Sub-100nm DRAM Cell Transistors

T. J. Kim; Y. P. Kim; B. C. Lee; S. Choi; U. I. Chung; J. T. Moon

doi:https://doi.org/10.7567/SSDM.2003.C-3-3

2003 International Conference on Solid State Devices and Materials

Sep 16, 2003 - Sep 18, 2003
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-3-3] Silicon Selective Epitaxial Growth for Self-Aligned Cell Contact Featuring High Performance Sub-100nm DRAM Cell Transistors

T. J. Kim, Y. P. Kim, B. C. Lee, S. Choi, U. I. Chung, J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.C-3-3

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