The Japan Society of Applied Physics

[C-3-3] Silicon Selective Epitaxial Growth for Self-Aligned Cell Contact Featuring High Performance Sub-100nm DRAM Cell Transistors

T. J. Kim、Y. P. Kim、B. C. Lee、S. Choi、U. I. Chung、J. T. Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.C-3-3