Optimum TiSi2 Ohmic Contact Process for Sub-100nm Devices

Hee Sook Park; Jong Myeong Lee; Sang Woo Lee; Jea Hwa Park; Kwang Jin Moon; Sang Bom Kang; Gil Heyun Choi; U In Chung; Joo Tae Moon

doi:https://doi.org/10.7567/SSDM.2003.C-3-4

2003 International Conference on Solid State Devices and Materials

2003年9月16日〜 2003年9月18日
Keio Plaza Inter-Continental Tokyo (Keio Plaza Hotel), Tokyo, Japan

[C-3-4] Optimum TiSi2 Ohmic Contact Process for Sub-100nm Devices

Hee Sook Park、Jong Myeong Lee、Sang Woo Lee、Jea Hwa Park、Kwang Jin Moon、Sang Bom Kang、Gil Heyun Choi、U In Chung、Joo Tae Moon (1.Process Development Team, Semiconductor R&D Center, Samsung Electronics Co., Ltd.)

https://doi.org/10.7567/SSDM.2003.C-3-4

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