[D-1-1] The Effect of Boron and Fluorine Incorporation in SiON Gate Insulator on NBTI

Takaoki Sasaki, Fumio Ootsuka, Hiroji Ozaki, Mitsuhiro Tomikawa, Mitsuo Yasuhira, Tsunetoshi Arikado (1.Semiconductor Leading Edge Technologies Inc.)

https://doi.org/10.7567/SSDM.2003.D-1-1