[D-1-1] The Effect of Boron and Fluorine Incorporation in SiON Gate Insulator on NBTI

Takaoki Sasaki、Fumio Ootsuka、Hiroji Ozaki、Mitsuhiro Tomikawa、Mitsuo Yasuhira、Tsunetoshi Arikado (1.Semiconductor Leading Edge Technologies Inc.)

https://doi.org/10.7567/SSDM.2003.D-1-1