[D-10-3] Etching yields of HfO2 under Ar+ and CFX+ (X = 1, 2, 3) ion beam irradiation

Kazuhiro Karahashi、Nobuhisa Yamagishi、Tsuyoshi Horikawa、Akira Toriumi (1.MIRAI Project Association of Super -Advanced Electronics Technologies (ASET)、2.MIRAI Project, Advanced Semiconductor Research Center (ASRC), National Institute of Advanced Industrial Science and Technology (AIST)、3.Deparatment of Materials Science School of Engineering, University of Tokyo)

https://doi.org/10.7567/SSDM.2003.D-10-3